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Summary

  • Figure Caption: Low pressure metal organic vapor phase epitaxy (MOVPE) can be used to grow III-V nanowires epitaxially on suitable crystalline substrates, sucha s III-V materials or silicon with a reasonably matching lattice constant.

Nanowire growth is catalyzed by various nanoparticles, which are deposited on the substrate surface, typically gold nanoparticles with a diameter of 20-100nm.

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Date/TimeThumbnailDimensionsUserComment
current00:41, 20 November 2006Thumbnail for version as of 00:41, 20 November 2006656 × 261 (60 KB)KristianMolhave
00:24, 20 November 2006Thumbnail for version as of 00:24, 20 November 2006272 × 856 (62 KB)KristianMolhave*Figure Caption: Low pressure metal organic vapor phase epitaxy (MOVPE) can be used to grow III-V nanowires epitaxially on suitable crystalline substrates, sucha s III-V materials or silicon with a reasonably matching lattice constant. Nanowire growth is

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